advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 1 dc - 20 ghz discrete power phemt TGF2022-60 key features and performance ? frequency range: dc - 20 ghz ? > 38 dbm nominal psat ? 57% maximum pae ? 12 db nominal power gain ? suitable for high reliability applications ? 6.0mm x 0.35um power phemt ? nominal bias vd = 8-12v, idq = 448-752ma (u nder rf drive, id rises from 448ma to 1480ma) ? chip dimensions: 0.57 x 2.93 x 0.10 mm (0.022 x 0.115 x 0.004 in) primary applications ? point-to-point radio ? high-reliability space ? military ? base stations ? broadband wireless applications product description the triquint TGF2022-60 is a discrete 6.0 mm phemt which operates from dc-20 ghz. the TGF2022-60 is designed using triquints proven standard 0.35um power phemt production process. the TGF2022-60 typically provides > 38 dbm of saturated output power with power gain of 12 db. the the maximum power added efficiency is 57% which makes the TGF2022-60 appropriate for high efficiency applications. the TGF2022-60 is also ideally suited for point-to-point radio, high-reliability space, and military applications. the TGF2022-60 has a protective surface passivation layer providing environmental robustness. lead-free and rohs compliant note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. 0 5 10 15 20 25 30 35 0246810121416 frequency (ghz) maximum gain (db) mag msg
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 2 table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 12.5 v 2/ v - negative supply voltage range -5v to 0v i + positive supply current (quiescent) 2820 ma 2/ | i g | gate supply current 70 ma p in input continuous wave power 33 dbm 2/ p d power dissipation see note 3 2/ 3 / t ch operating channel temperature 150 c 4/ t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ for a median life time of 1e+6 hrs, power dissipation is limited to: p d (max) = (150 c C tbase c) / 14.2 ( c/w) 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TGF2022-60 table ii dc probe characteristics (t a = 25 q c, nominal) symbol parameter minimum typical maximum unit idss saturated drain current - 1800 - ma gm transconductance - 2250 - ms v p pinch-off voltage -1.5 -1 -0.5 v v bgs breakdown voltage gate-source -30 - -14 v v bgd breakdown voltage gate-drain -30 - -14 v note: for triquints 0.35um power phemt devices, rf breakdown >> dc breakdown
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 3 table iii rf characterization table 1/ (t a = 25 c, nominal) symbol parameter f = 10 ghz f = 18 ghz units vd = 10v idq = 448 ma vd = 12v idq = 448 ma vd = 10v idq = 448 ma vd = 12v idq = 448 ma power tuned: psat pae gain rp 2/ cp 2/ g l 3/, 4/ saturated output power power added efficiency power gain parallel resistance parallel capacitance load reflection coefficient 38.8 51.6 12.3 3.34 3.812 0.922 e 176.3 39.4 50 7.8 4.13 3.607 0.916 e 140.4 37.6 42 12.1 3.41 3.151 0.952 e 176.2 38.1 38 7.6 4.00 3.473 0.955 e 175.9 dbm % db w pf - efficiency tuned: psat pae gain rp 2/ cp 2/ g l 3/, 4/ saturated output power power added efficiency power gain parallel resistance parallel capacitance load reflection coefficient 37.6 57.0 12.4 6.68 4.425 0.942 e 173.6 39.0 53.8 12.4 6.49 3.947 0.931 e 173.3 37.2 44.0 7.9 4.01 3.566 0.957 e 175.9 37.9 41.0 7.6 4.49 3.736 0.962 e 175.8 dbm % db w pf - 1/ values in this table are from measurements taken from a 0.75mm unit phemt cell at 10 and 18 ghz 2/ large signal equivalent phemt output network 3/ optimum load impedance for maximum power or maximum pae at 10 and 18 ghz 4 the reflection coefficients for this device have been calculated from the scaled large signal rp & cp. the series resistance and inductance (rd and ld) shown in the figure on page 4 is excluded table iv thermal information parameter test conditions t ch ( o c) t jc ( q c/w) t m (hrs) q jc thermal resistance (channel to backside of carrier) vd = 12 v idq = 448 ma pdiss = 8.96 w 146 14.2 1.4e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. TGF2022-60
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 4 drain lg rg cdg rd ld rdg gate rgs cgs r i + v i - gm v i rds cds ls rs source source rp, cp TGF2022-60 linear model for 0.75 mm unit phemt cell model parameter vd = 8v id = 56ma vd = 8v id = 75ma vd = 8v id = 94ma vd = 10v id = 56ma vd = 10v id = 75ma vd = 12v id = 56ma units rg 0.18 0.19 0.19 0.20 0.20 0.21 w rs 0.31 0.31 0.31 0.36 0.35 0.40 w rd 0.41 0.43 0.44 0.41 0.42 0.40 w gm 0.242 0.25 0.25 0.23 0.24 0.227 s cgs 1.86 2.019 2.12 2.04 2.15 2.13 pf ri 1.33 1.28 1.28 1.36 1.32 1.38 w cds 0.143 0.144 0.144 0.142 0.143 0.142 pf rds 195.83 199.07 206.30 224.73 225.77 244.05 w cgd 0.090 0.084 0.079 0.080 0.077 0.076 pf tau 5.94 6.24 6.55 6.82 6.99 7.37 ps ls 0.002 0.002 0.002 0.002 0.002 0.002 nh lg 0.103 0.103 0.103 0.102 0.103 0.102 nh ld 0.110 0.109 0.108 0.108 0.108 0.108 nh rgs 3920 5200 7250 5940 5700 6180 w rgd 54900 61900 76900 64100 78100 77000 w upc = 0.75mm unit phemt cell gate source source drain upc 8qlws+(07fhoo 5hihuhqfh3odqh
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 5 TGF2022-60 linear model for 6mm phemt l - via = 0.0135 nh (9x) upc upc upc upc upc upc upc upc 116 215 314 413 512 611 710 89 gate pads (8x) drain pads (8x)
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 6 TGF2022-60 unmatched s-parameters for 6 mm phemt bias conditions: vd = 12v, idq = 448ma note: the s-parameters are calculated by connecting nodes 1-8 together, and nodes 9-16 together to form a 2-port network. frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (ghz) db deg db deg db deg db deg 0.5 -0.267 -160.66 20.810 96.96 -37.554 9.36 -3.758 -171.94 1 -0.248 -170.31 14.876 88.74 -37.477 3.63 -3.641 -174.40 1.5 -0.244 -173.59 11.346 83.87 -37.501 1.23 -3.583 -174.60 2 -0.241 -175.26 8.817 79.86 -37.554 -0.29 -3.522 -174.25 2.5 -0.238 -176.27 6.834 76.22 -37.626 -1.44 -3.451 -173.72 3 -0.236 -176.97 5.195 72.78 -37.716 -2.37 -3.370 -173.14 3.5 -0.233 -177.47 3.790 69.48 -37.821 -3.15 -3.280 -172.57 4 -0.230 -177.87 2.556 66.28 -37.941 -3.80 -3.183 -172.02 4.5 -0.227 -178.19 1.451 63.17 -38.074 -4.34 -3.079 -171.53 5 -0.223 -178.45 0.445 60.13 -38.220 -4.77 -2.972 -171.10 5.5 -0.220 -178.68 -0.479 57.17 -38.377 -5.09 -2.862 -170.73 6 -0.216 -178.88 -1.338 54.28 -38.545 -5.31 -2.751 -170.42 6.5 -0.212 -179.06 -2.142 51.45 -38.722 -5.43 -2.640 -170.17 7 -0.208 -179.23 -2.899 48.69 -38.906 -5.43 -2.530 -169.99 7.5 -0.204 -179.38 -3.615 46.00 -39.098 -5.32 -2.422 -169.85 8 -0.201 -179.52 -4.297 43.38 -39.294 -5.09 -2.316 -169.77 8.5 -0.197 -179.66 -4.947 40.82 -39.495 -4.74 -2.214 -169.73 9 -0.193 -179.79 -5.570 38.32 -39.699 -4.28 -2.114 -169.74 9.5 -0.189 -179.91 -6.168 35.88 -39.904 -3.70 -2.019 -169.78 10 -0.185 179.97 -6.744 33.50 -40.109 -2.99 -1.927 -169.85 10.5 -0.182 179.85 -7.299 31.19 -40.313 -2.16 -1.839 -169.95 11 -0.178 179.74 -7.835 28.93 -40.513 -1.22 -1.756 -170.08 11.5 -0.175 179.63 -8.354 26.73 -40.709 -0.15 -1.676 -170.23 12 -0.172 179.52 -8.857 24.58 -40.898 1.04 -1.600 -170.40 12.5 -0.169 179.41 -9.344 22.48 -41.079 2.34 -1.527 -170.58 13 -0.166 179.31 -9.818 20.44 -41.251 3.75 -1.459 -170.78 13.5 -0.163 179.21 -10.278 18.44 -41.412 5.26 -1.394 -170.98 14 -0.160 179.10 -10.726 16.49 -41.560 6.87 -1.332 -171.20 14.5 -0.157 179.00 -11.162 14.59 -41.694 8.58 -1.273 -171.43 15 -0.154 178.90 -11.586 12.73 -41.813 10.36 -1.218 -171.66 15.5 -0.152 178.81 -12.001 10.92 -41.916 12.21 -1.165 -171.90 16 -0.150 178.71 -12.405 9.15 -42.001 14.12 -1.115 -172.14 16.5 -0.147 178.61 -12.800 7.41 -42.068 16.07 -1.068 -172.38 17 -0.145 178.51 -13.186 5.71 -42.117 18.06 -1.023 -172.63 17.5 -0.143 178.42 -13.564 4.05 -42.148 20.07 -0.981 -172.88 18 -0.141 178.32 -13.934 2.43 -42.159 22.09 -0.940 -173.13 18.5 -0.139 178.23 -14.296 0.84 -42.153 24.11 -0.902 -173.38 19 -0.137 178.14 -14.650 -0.72 -42.129 26.11 -0.866 -173.63 19.5 -0.135 178.04 -14.998 -2.25 -42.088 28.09 -0.831 -173.87 20 -0.134 177.95 -15.340 -3.75 -42.031 30.03 -0.799 -174.12 20.5 -0.132 177.86 -15.675 -5.22 -41.959 31.93 -0.767 -174.37 21 -0.131 177.77 -16.004 -6.67 -41.874 33.78 -0.738 -174.61 21.5 -0.129 177.68 -16.328 -8.09 -41.776 35.57 -0.709 -174.86 22 -0.128 177.59 -16.647 -9.48 -41.666 37.30 -0.683 -175.10 22.5 -0.126 177.50 -16.961 -10.85 -41.547 38.97 -0.657 -175.34 23 -0.125 177.41 -17.270 -12.20 -41.418 40.57 -0.632 -175.58 23.5 -0.124 177.32 -17.575 -13.53 -41.282 42.11 -0.609 -175.81 24 -0.123 177.23 -17.875 -14.84 -41.139 43.58 -0.587 -176.05 24.5 -0.122 177.14 -18.172 -16.12 -40.991 44.98 -0.565 -176.28 25 -0.120 177.06 -18.466 -17.39 -40.838 46.32 -0.545 -176.51 25.5 -0.119 176.97 -18.756 -18.64 -40.681 47.59 -0.526 -176.74 26 -0.118 176.88 -19.043 -19.88 -40.521 48.80 -0.507 -176.96
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 7 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handing, assembly and test. mechanical drawing TGF2022-60 >@ > @ > @ >@ > @ >@ >@ >@ > @ > @ >@ >@ >@ >@ >@ >@ > @ > @ > @ > @ 8qlwv ploolphwhuv lqfkhv 7klfnqhvv &klshgjhwrerqgsdgglphqvlrqvduhvkrzqwrfhqwhurie &klsvl]hwrohudqfh *1',6%$&.6,'(2)00,& %rqgsdgv *dwh [ [ %rqgsdgv 'udlq [ [ %rqgsdg 9j
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advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 8 TGF2022-60 reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. assembly process notes
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